to ? 92 1.emitter 2.collector 3.base to-92 plastic-encapsulate transistors KSC5019 transistor (npn) features z low v ce(sat) z general purpose amplifier transistor maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 30 v collector-emitter breakdown v (br)ceo i c =10ma,i b =0 10 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 6 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =6v,i c =0 0.1 a h fe(1) v ce =1v, i c =500ma 140 600 dc current gain h fe(2) v ce =1v, i c =2a 70 collector-emitter saturation voltage v ce(sat) i c =2a,i b =50ma 0.5 v base-emitter voltage v be v ce =1v, i c =500ma 1.5 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 27 pf transition frequency f t v ce =1v,i c = 500ma 150 mhz classification of h fe(1) rank l m n p range 140-240 200-330 300-450 420-600 symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 10 v v ebo emitter-base voltage 6 v i c collector current 2 a p c collector power dissipation 750 mw r ja thermal resistance from junction to ambient 166 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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